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TK12A50E

Toshiba Semiconductor
Part Number TK12A50E
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 12, 2014
Detailed Description TK12A50E MOSFETs Silicon N-Channel MOS (π-MOS) TK12A50E 1. Applications • Switching Voltage Regulators 2. Features (1...
Datasheet PDF File TK12A50E PDF File

TK12A50E
TK12A50E

Overview
TK12A50E MOSFETs Silicon N-Channel MOS (π-MOS) TK12A50E 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.
40 Ω (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) Enhancement mode: Vth = 2.
5 to 4.
0 V (VDS = 10 V, ID = 1.
2 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 1 2013-02-13 Rev.
2.
0 TK12A50E 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drai...


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