DatasheetsPDF.com

TK19A45D

Part Number	TK19A45D
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Sep 12, 2014
Detailed Description	TK19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK19A45D Switching Regulator Applications ...
Datasheet	TK19A45D PDF File

Overview

TK19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK19A45D Switching Regulator Applications Ф3.
2 ± 0.
2 10 ± 0.
3 Unit: mm 2.
7 ± 0.
2 A 3.
9 3.
0 1.
14 ± 0.
15 2.
8 MAX.
2.
54 1 2 3 2.
6 ± 0.
1 0.
69 ± 0.
15 Ф0.
2 M A • • • • Low drain-source ON-resistance: RDS (ON) = 0.
19 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 10 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 ±30 19 76 50 513 19 5.
0 150 −55 to 150 A W mJ A mJ °C °C Unit 2.
54 0.
64 ± 0.
15 V V 13 ± 0.
5 15.
0 ± 0.
3 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B Weight : 1.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.
5 62.
5 Unit Internal Connection 2 °C/W °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.
37 mH, RG = 25 Ω, ...

Similar Datasheet

TK19A45D N-Channel MOSFET - Toshiba Semiconductor
TK19A45D N-Channel MOSFET - INCHANGE

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)