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SSM6J215FE

Toshiba Semiconductor
Part Number SSM6J215FE
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 12, 2014
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J215FE 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate...
Datasheet PDF File SSM6J215FE PDF File

SSM6J215FE
SSM6J215FE

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J215FE 1.
Applications • Power Management Switches 2.
Features (1) 1.
5-V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 154 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 104 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 79 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 59 mΩ (max) (@VGS = -4.
5 V) 3.
Packaging and Pin Configuration ES6 SSM6J215FE 1,2,5,6: Drain 3: Gate 4: Source Start of commercial production 2011-07 1 2014-04-04 Rev.
2.
0 SSM6J215FE 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 Drain current (DC) (Note 1) I...


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