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CLF1G0035S-100

Part Number	CLF1G0035S-100
Manufacturer	NXP
Description	Broadband RF power GaN HEMT
Published	Sep 12, 2014
Detailed Description	CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product prof...
Datasheet	CLF1G0035S-100 PDF File

Overview

CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev.
2 — 29 January 2013 Objective data sheet 1.
Product profile 1.
1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP.
Frequency of operation is from DC to 3.
5 GHz.
Table 1.
CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board.
Test signal 1-Tone CW f (MHz) 500 1000 1500 2000 1-Tone pulsed [1] 500 1000 1500 2000 [1] Pulsed RF; tp = 50 s;  = 1 %.
PL (W) 100 100 100 100 100 100 100 100 Gp (dB) 14.
2 11.
2 10.
8 11.
7 15.
5 14 14.
3 13.
9 D (%) 61.
6 ...

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