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AP2602GY-HF-3

Advanced Power Electronics
Part Number AP2602GY-HF-3
Manufacturer Advanced Power Electronics
Description N-channel Enhancement-mode Power MOSFET
Published Sep 13, 2014
Detailed Description Advanced Power Electronics Corp. AP2602GY-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Suppor...
Datasheet PDF File AP2602GY-HF-3 PDF File

AP2602GY-HF-3
AP2602GY-HF-3

Overview
Advanced Power Electronics Corp.
AP2602GY-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Supports 2.
5V Gate Drive Lower On-resistance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 20V 34mΩ 6.
3A Description S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D D G D The SOT-26 package is widely used for commercial and industrial applications, where space is at a premium.
SOT-26 D Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 +12 6.
3 5 30 2 0.
016 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 62.
5 Unit °C/W Ordering Information AP2602GY-HF-3TR : in RoHS-compliant halogen-free SOT-26 shipped on tape and reel (3000pcs/reel) ©2009 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200801243-3 1/5 Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆Tj AP2602GY-HF-3 Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
20 0.
5 - Typ.
0.
1 13 8.
7 1.
5 3.
6 6 14 18.
4 2.
8 603 144 111 Max.
Units 30 34 50 1 10 ±100 16 1085 V V/°C mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=5.
5A VGS=4.
5V, ID=5.
3A VGS=2.
5V, ID=2.
6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=55 C) o VDS=VGS, ID=250uA VDS=5V, I...


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