DatasheetsPDF.com

AP2603GY-HF

Advanced Power Electronics
Part Number AP2603GY-HF
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 13, 2014
Detailed Description AP2603GY-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ ...
Datasheet PDF File AP2603GY-HF PDF File

AP2603GY-HF
AP2603GY-HF

Overview
AP2603GY-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free SOT-26 D S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G D D -20V 65mΩ -5A D ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
The SOT-26 package is widely used for all commercial-industrial applications.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current 1 3 3 Rating -20 +12 -5 -4 -20 2 0.
016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.
5 Unit ℃/W 1 201208305 Data and specifications subject to change without notice AP2603GY-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-4.
5A VGS=-4.
5V, ID=-4.
2A VGS=-2.
5V, ID=-2.
0A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
-20 -0.
5 - Typ.
10 11.
5 1.
5 5 5.
5 16.
5 42 40 780 130 120 7 Max.
Units 53 65 120 -1.
2 -1 -10 +100 16 1200 14 V mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VDS=VGS, ID=-250uA VDS=-5V, ID=-2.
8A VDS=-20V, VGS=0V VGS= +12V, VDS=0V ID=-4.
2A VDS=-16V VGS=-4.
5V VDS=-15V ID=-4.
2A RG=6Ω VGS=-10V VGS=0V VDS=-15V f=1.
0MHz f=1.
0MHz Drain-Source Leakage Current (Tj=55 C) VDS=-16V, VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source C...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)