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AP2605GY0-HF

Part Number	AP2605GY0-HF
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 13, 2014
Detailed Description	AP2605GY0-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Lower Gate Charge ...
Datasheet	AP2605GY0-HF PDF File

Overview

AP2605GY0-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package ▼ RoHS Compliant & Halogen-Free G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -30V 80mΩ -4A S S D D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for all commercial-industrial applications.
G SOT-26 D D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 + 20 -4 -3 -20 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Continuous Drain Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.
5 Unit ℃/W 1 201111011 Data and specifications subject to change without notice AP2605GY0-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-4A VGS=-4.
5V, ID=-3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS=VGS, ID=-250uA VDS=-10V, ID=-3A VDS=-24V, VGS=0V VGS=+20V, VDS=0V ID=-4A VDS=-15V VGS=-4.
5V VDS=-15V ID=-1A RG=3.
3Ω VGS=-10V VGS=0V VDS=-15V f=1.
0MHz f=1.
0MHz Min.
-30 -1 Typ.
8.
6 6.
5 1.
6 3 8 6.
5 20 7.
5 550 95 85 5.
2 Max.
Units 80 120 -3 -10 +100 10.
4 10.
4 V mΩ mΩ V S uA nA nC n...

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AP2605GY0-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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