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AP2606AGY-HF

Part Number	AP2606AGY-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 13, 2014
Detailed Description	AP2606AGY-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Lower Gate Charge ...
Datasheet	AP2606AGY-HF PDF File

Overview

AP2606AGY-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package ▼ RoHS Compliant & Halogen-Free D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET S BVDSS RDS(ON) G D 30V 28mΩ 7A ID SOT-26 D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial applications.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 30 +20 7 5.
6 20 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.
5 Unit ℃/W 1 201009022 Data and specifications subject to change without notice AP2606AGY-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=7A VGS=4.
5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min.
30 1 - Typ.
10 6 2 3 6 6 15 3.
5 460 80 70 1.
9 Max.
Units 28 42 3 10 +100 9.
6 740 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=24V, VGS=0V VGS=+20V, VDS=0V ID=5A VDS=15V VGS=4.
5V VDS=15V ID=1A RG=3.
3Ω VGS=10V VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitan...

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AP2606AGY-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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