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AP2607GY-HF

Advanced Power Electronics
Part Number AP2607GY-HF
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 13, 2014
Detailed Description AP2607GY-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ ...
Datasheet PDF File AP2607GY-HF PDF File

AP2607GY-HF
AP2607GY-HF

Overview
AP2607GY-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ Halogen Free & RoHS Compliant Product G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -20V 52mΩ -5A S S D D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for all commercial-industrial applications.
G SOT-26 D D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 +8 -5 -4 -20 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.
5 Unit ℃/W 1 201104223 Data and specifications subject to change without notice AP2607GY-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-4.
5V, ID=-5A VGS=-2.
5V, ID=-4A VGS=-1.
8V, ID=-1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
-20 -0.
3 - Typ.
9 13 1.
5 4.
5 10 18 23 31 120 105 Max.
Units 52 65 90 -1 -1 -10 +100 21 V mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-5V, ID=-5A VDS=-16V, VGS=0V VGS= + 8V, VDS=0V ID=-5A VDS=-10V VGS=-4.
5V VDS=-10V ID=-1A RG=3.
3Ω,VGS=-5V RD=10Ω VGS=0V VDS=-20V f=1.
0MHz Drain-Source Leakage Current (Tj=55 C) VDS=-16V, VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fal...


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