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AP2609GY-HF

Advanced Power Electronics
Part Number AP2609GY-HF
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 13, 2014
Detailed Description AP2609GY-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ ...
Datasheet PDF File AP2609GY-HF PDF File

AP2609GY-HF
AP2609GY-HF

Overview
AP2609GY-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free SOT-26 D D S P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G D D -20V 57mΩ - 5.
1A D ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness.
The SOT-26 package is widely used for all commercial-industrial applications.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.
5V Continuous Drain Current , VGS @ 4.
5V Pulsed Drain Current 1 3 3 Rating - 20 +12 -5.
1 -4 -20 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.
5 Unit ℃/W 1 201203011 Data and specifications subject to change without notice AP2609GY-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-4.
5V, ID=-5A VGS=-2.
5V, ID=-3A Min.
-20 -0.
5 - Typ.
40 60 -0.
7 10 8.
5 1.
2 3 10 20 27 22 660 135 120 7.
2 Max.
Units 57 100 -1.
2 -10 +100 14 1050 14.
4 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS=VGS, ID=-250uA VDS=-5V, ID=-3A VDS=-16V, VGS=0V VGS= +12V, VDS=0V ID=-3A VDS=-10V VGS=-4.
5V VDS=-10V ID=-1A RG=3.
3Ω...


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