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SSM6J401TU

Toshiba Semiconductor
Part Number SSM6J401TU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 14, 2014
Detailed Description MOSFETs Silicon P-Channel MOS SSM6J401TU 1. Applications • DC-DC Converters • High-Speed Switching 2. Features (1) 4.0 V...
Datasheet PDF File SSM6J401TU PDF File

SSM6J401TU
SSM6J401TU

Overview
MOSFETs Silicon P-Channel MOS SSM6J401TU 1.
Applications • DC-DC Converters • High-Speed Switching 2.
Features (1) 4.
0 V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = -4 V) RDS(ON) = 73 mΩ (max) (@VGS = -10 V) 3.
Packaging and Pin Assignment UF6 SSM6J401TU 1,2,5,6: Drain 3: Gate 4: Source ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2007-07 2022-07-04 Rev.
1.
0 SSM6J401TU 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -30 V VGSS ±20 V Drain current (DC) ID -2.
5 A Drain current (pu...


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