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SSM6K208FE

Toshiba Semiconductor
Part Number SSM6K208FE
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 14, 2014
Detailed Description SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE ○ High-Speed Switching Applications ○ ...
Datasheet PDF File SSM6K208FE PDF File

SSM6K208FE
SSM6K208FE


Overview
SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit: mm • 1.
8V drive • Low ON-resistance: Ron = 296 mΩ (max) (@VGS = 1.
8 V) Ron = 177 mΩ (max) (@VGS = 2.
5 V) Ron = 133 mΩ (max) (@VGS = 4.
0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDSS 30 V VGSS ± 12 V ID 1.
9 A IDP 3.
8 PD (Note 1) 500 mW Tch 150 °C Tstg −55 to 150 °C ES6 1,2,5,6: Drain 3 : Gate 4 : Source JEDEC ― Note: Using contin...



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