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SSM6K31FE

Toshiba Semiconductor
Part Number SSM6K31FE
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 14, 2014
Detailed Description SSM6K31FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K31FE ○ High speed switching ○ DC-DC Converter...
Datasheet PDF File SSM6K31FE PDF File

SSM6K31FE
SSM6K31FE

Overview
SSM6K31FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K31FE ○ High speed switching ○ DC-DC Converter : mm • 4-V drive • Low RDS (ON): R DS (ON) = 320 mΩ (max) (@VGS = 10 V) : R DS (ON) = 540 mΩ (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS 20 V VGSS ±20 V ID 1.
2 A IDP 2.
4 PD(Note 1) 500 mW Tch 150 °C Tstg −55 to 150 °C 1,2,5,6: Drain 3: Gate 4: Source JEDEC ― JEITA ― Note: Using continuously under heavy loads (e.
g.
the application of TOSHIBA 2-2N1J ...


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