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SSM3J331R

Toshiba Semiconductor
Part Number SSM3J331R
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 14, 2014
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J331R 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate ...
Datasheet PDF File SSM3J331R PDF File

SSM3J331R
SSM3J331R

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J331R 1.
Applications • Power Management Switches 2.
Features (1) 1.
5-V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 75 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 55 mΩ (max) (@VGS = -4.
5 V) 3.
Packaging and Pin Configuration SOT-23F SSM3J331R 1.
Gate 2.
Source 3.
Drain ©2016 Toshiba Corporation 1 Start of commercial production 2011-07 2016-08-24 Rev.
5.
0 SSM3J331R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 Drain curre...


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