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SSM5N16FE

Part Number	SSM5N16FE
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOSFET
Published	Sep 14, 2014
Detailed Description	SSM5N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N16FE High Speed Switching Applications Analog...
Datasheet	SSM5N16FE PDF File

Overview

SSM5N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N16FE High Speed Switching Applications Analog Switching Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.
0 Ω (max) (@VGS = 4 V) : Ron = 4.
0 Ω (max) (@VGS = 2.
5 V) : Ron = 15 Ω (max) (@VGS = 1.
5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS 20 V VGSS ±10 V ID 100 mA IDP 200 PD(Note 1) 150 mW Tch 150 °C Tstg −55 to 150 °C Note: Note ...

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