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AP9408AGH

Advanced Power Electronics
Part Number AP9408AGH
Manufacturer Advanced Power Electronics
Description N-Channel MOSFET
Published Sep 14, 2014
Detailed Description AP9408AGH RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast...
Datasheet PDF File AP9408AGH PDF File

AP9408AGH
AP9408AGH


Overview
AP9408AGH RoHS-compliant Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 10mΩ 53A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G □ D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 ±20 53 33 160 44.
6 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.
8 110 Units ℃/W ℃/W Data & specifications subject to change without notice 1 200810283 AP9408AGH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.
5V, ID=20A Min.
30 1 - Typ.
30 6.
5 1.
8 3.
7 7 4.
5 16 6 600 185 80 2.
5 Max.
Units 10 15 3 10 ±100 10.
5 960 3.
8 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VGS=±20V ID=20A VDS=24V VGS=4.
5V VDS=15V ID=1A RG=3.
3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time T...


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