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SSM6N24TU

Toshiba Semiconductor
Part Number SSM6N24TU
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 14, 2014
Detailed Description SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N24TU High Speed Switching Applicat...
Datasheet PDF File SSM6N24TU PDF File

SSM6N24TU
SSM6N24TU

Overview
SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N24TU High Speed Switching Applications Unit: mm • • Optimum for high-density mounting in small packages Low on-resistance: Ron = 145mΩ (max) (@VGS = 4.
5 V) Ron = 180mΩ (max) (@VGS = 2.
5 V) 0.
65 0.
65 2.
0±0.
1 1.
3±0.
1 2.
1±0.
1 1.
7±0.
1 +0.
1 0.
3-0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ± 12 0.
5 1.
5 500 150 −55~150 Unit V V A mW °C °C 1 2 3 6 5 4 0.
7±0.
05 1.
Source1 2.
Gate1 3.
Drain2 4.
Source2 5.
Gate2 6.
Drain1 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
UF6 JEDEC JEITA TOSHIBA ― ― 2-2T1B Weight: 7.
0 mg (typ.
) Note 1: Mounted on FR4 board.
(total dissipation) 2 (25.
4 mm × 25.
4 mm × 1.
6 t, Cu Pad: 645 mm ) Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 NF 1 2 3 Q1 Q2 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity.
Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
1 2007-11-01 +0.
06 0.
16-0.
05 SSM6N24TU Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-...


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