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AP15P10GH-HF

Part Number	AP15P10GH-HF
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 14, 2014
Detailed Description	AP15P10GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fas...
Datasheet	AP15P10GH-HF PDF File

Overview

AP15P10GH/J-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -100V 230mΩ -15A S Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
The through-hole version (AP15P10GJ) is available for lowprofile applications.
G G D S TO-252(H) D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -100 +20 -15 -9.
4 -60 96 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.
3 62.
5 110 Units ℃/W ℃/W ℃/W 1 200910084 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP15P10GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Test Conditions VGS=0V, ID=-1mA VGS=-10V, ID=-6A VDS=VGS, ID=-250uA VDS=-10V, ID=-9A VDS=-100V, VGS=0V VGS= +20V, VDS=0V ID=-9A VDS=-80V VGS=-10V VDS=-50V ID=-9A RG=10Ω,VGS=-10V RD=5.
6Ω VGS=0V VDS=-25V f=1.
0MHz f=1.
0MHz Min.
-100 -1 - Typ.
8 37 5 15 11 25 56 36 250 75 3.
6 Max.
Units 230 -3 -25 -250 +100 60 5 V mΩ V S uA uA nA...

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AP15P10GH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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