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AP18P10GM-HF

Part Number	AP18P10GM-HF
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 14, 2014
Detailed Description	AP18P10GM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fas...
Datasheet	AP18P10GM-HF PDF File

Overview

AP18P10GM-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free SO-8 D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S S S G -100V 180mΩ -2.
7A D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating -100 +20 -2.
7 -2.
1 -10 2.
5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 201007221 Data and specifications subject to change without notice AP18P10GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-2A VGS=-4.
5V, ID=-1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min.
-100 -1 - Typ.
8.
4 14 4 7 10 5 55 22 120 70 Max.
Units 180 210 -3 -25 +100 22.
4 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-10V, ID=-2A VDS=-80V, VGS=0V VGS=+20V, VDS=0V ID=-2A VDS=-50V VGS=-4.
5V VDS=-50V ID=-1A RG=3.
3Ω VGS=-10V VGS=0V VDS=-25V f=1.
0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Tur...

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AP18P10GM-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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