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AP9585GM-HF

Part Number	AP9585GM-HF
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 14, 2014
Detailed Description	AP9585GM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast...
Datasheet	AP9585GM-HF PDF File

Overview

AP9585GM-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free SO-8 S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G S S -80V 180mΩ -2.
7A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -80 +20 -2.
7 -2.
1 -20 2.
5 0.
02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 201107041 Data and specifications subject to change without notice AP9585GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-2.
7A VGS=-4.
5V, ID=-2.
5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
-80 -1 - Typ.
5 18 5 7 10 6 67 30 140 98 Max.
Units 180 200 -3 -1 -25 +100 28 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-10V, ID=-2.
7A VDS=-80V, VGS=0V VGS=+20V, VDS=0V ID=-2.
7A VDS=-64V VGS=-4.
5V VDS=-40V ID=-1A RG=3.
3Ω,VGS=-10V RD=40Ω VGS=0V VDS=-25V f=1.
0MHz Drain-Source Leakage Current (Tj=70 C) VDS=-64V, VGS=0V Gate-Source Leakage Total Gate Char...

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AP9585GM-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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