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AP08P20GP-HF

Part Number	AP08P20GP-HF
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 15, 2014
Detailed Description	AP08P20GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼...
Datasheet	AP08P20GP-HF PDF File

Overview

AP08P20GS/P-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -200V 680mΩ -8A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP08P20GP) are available for low-profile applications.
G D GD S TO-263(S) TO-220(P) S Units V V A A A W W/ ℃ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -200 +20 -8 -5 30 96 0.
77 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 1.
3 40 62 Units ℃/W ℃/W ℃/W 1 201108052 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP08P20GS/P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min.
-200 -2 - Typ.
-0.
03 4 20 5 13 12 14 64 28 1210 170 45 3.
6 Max.
Units 680 -4 -25 -250 +100 32 5.
4 V V/℃ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance Gate Threshold Voltage Fo...

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AP08P20GP-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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