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AP9410GMT-HF

Part Number	AP9410GMT-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 15, 2014
Detailed Description	AP9410GMT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V Gate Drive ▼ Simple Drive Requirem...
Datasheet	AP9410GMT-HF PDF File

Overview

AP9410GMT-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Capable of 2.
5V Gate Drive ▼ Simple Drive Requirement ▼ SO-8 Compatible ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 5.
5mΩ 80A D S D D D Description □ Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink.
S S S G ® PMPAK 5x6 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip), V GS @ 4.
5V Continuous Drain Current , VGS @ 4.
5V Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +12 80 23.
6 19 300 56.
8 5 4 Units V V A A A A W W mJ ℃ ℃ Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 28.
8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 2.
2 25 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201003031 AP9410GMT-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA VGS=10V, ID=20A Static Drain-Source On-Resistance 2 o Min.
30 0.
5 - Typ.
100 28 3 12 12 15 38 25 400 230 Max.
Units 5 5.
5 8 1.
2 10 +100 45 V mΩ mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF VGS=4.
5V, ID=20A VGS=2.
5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 VDS=VGS, ID=250uA VDS...

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AP9410GMT-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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