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APTGT150DH120G

Microsemi
Part Number APTGT150DH120G
Manufacturer Microsemi
Description IGBT
Published Sep 17, 2014
Detailed Description APTGT150DH120G Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 CR3 VCES = 1200V IC = 150A ...
Datasheet PDF File APTGT150DH120G PDF File

APTGT150DH120G
APTGT150DH120G

Overview
APTGT150DH120G Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 CR3 VCES = 1200V IC = 150A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS E4 G4 OUT2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 300A @ 1150V These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
See application note APT0502 on www.
microsemi.
com www.
microsemi.
com 1-5 APTGT150DH120G – Rev 1 July, 2006 Max ratings 1200 220 150 350 ±20 690 Unit V A V W APTGT150DH120G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min Typ 1.
7 2.
0 5.
8 Max 350 2.
1 6.
5 400 Unit µA V V nA 5.
0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on...


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