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APTGT150DA120D1

Advanced Power Technology
Part Number APTGT150DA120D1
Manufacturer Advanced Power Technology
Description IGBT
Published Sep 17, 2014
Detailed Description APTGT150DA120D1 Boost chopper ® Trench IGBT Power Module 3 VCES = 1200V IC = 150A @ Tc = 80°C Application • AC and DC ...
Datasheet PDF File APTGT150DA120D1 PDF File

APTGT150DA120D1
APTGT150DA120D1

Overview
APTGT150DA120D1 Boost chopper ® Trench IGBT Power Module 3 VCES = 1200V IC = 150A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Q2 6 7 1 2 3 4 5 7 6 2 1 Absolute maximum ratings Symbol VCES IC ICM VGE PD SCSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Short Circuit Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C 600A@900V These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1-3 APTGT150DA120D1 – Rev 0 January, 2004 Max ratings 1200 220 150 350 ±20 700 Unit V A V W APTGT150DA120D1 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 6mA VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 6mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A RG = 4.
7Ω Inductive Swi...


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