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APTGT150A170D1

Advanced Power Technology
Part Number APTGT150A170D1
Manufacturer Advanced Power Technology
Description IGBT
Published Sep 17, 2014
Detailed Description APTGT150A170D1 Trench IGBT Power Module Phase leg ® VCES = 1700V IC = 150A @ Tc = 80°C Application • Welding converter...
Datasheet PDF File APTGT150A170D1 PDF File

APTGT150A170D1
APTGT150A170D1

Overview
APTGT150A170D1 Trench IGBT Power Module Phase leg ® VCES = 1700V IC = 150A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Q1 4 5 Q2 6 7 3 1 2 3 4 5 7 6 2 1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25°C Tj = 125°C V W These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1-3 APTGT150A170D1 – Rev 0 300A@1600V January, 2004 TC = 25°C TC = 80°C TC = 25°C Max ratings 1700 280 150 300 ±20 780 Unit V A APTGT150A170D1 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 4mA VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 6 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 150A...


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