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CEM4600

Chino-Excel Technology
Part Number CEM4600
Manufacturer Chino-Excel Technology
Description Dual MOSFET
Published Sep 17, 2014
Detailed Description CEM4600 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7.3A, RDS(ON) = 18mΩ (typ) @VGS =...
Datasheet PDF File CEM4600 PDF File

CEM4600
CEM4600

Overview
CEM4600 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7.
3A, RDS(ON) = 18mΩ (typ) @VGS = 10V.
RDS(ON) = 26mΩ (typ) @VGS = 4.
5V.
-30V, -4.
6A, RDS(ON) = 45mΩ (typ) @VGS = -10V.
RDS(ON) = 72mΩ (typ) @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 30 P-Channel -30 Units V V A A W C ±20 7.
3 30 2.
0 ...


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