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Si4356DY

Vishay
Part Number Si4356DY
Manufacturer Vishay
Description N-Channel 30-V MOSFET
Published Sep 17, 2014
Detailed Description Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.006 @ V...
Datasheet PDF File Si4356DY PDF File

Si4356DY
Si4356DY

Overview
Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.
006 @ VGS = 10 V 0.
0075 @ VGS = 4.
5 V ID (A) 17 14 D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation D 100 % RG Tested APPLICATIONS D Buck Converter D Synchronous Rectifier - Secondary Rectifier D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "12 17 Steady State Unit V 12 9 "50 A 1.
40 1.
6 1.
0 -55 to 150 W _C ID IDM IS PD TJ, Tstg 14 2.
7 3.
0 2.
0 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71880 S-03662—Rev.
B, 14-Apr-03 www.
vishay.
com t v 10 sec Steady State Steady State RthJA RthJF Symbol Typical 34 67 15 Maximum 41 80 19 Unit _C/W 1 Si4356DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 17 A VGS = 4.
5 V, ID = 14 A VDS = 15 V, ID = 17 A IS = 2.
7 A, VGS = 0 V 40 0.
0048 0.
0060 60 0.
68 1.
1 0.
006 0.
0075 S V 0.
6 1.
4 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Tim...


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