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Si4354DY

Part Number	Si4354DY
Manufacturer	Vishay
Description	N-Channel 30-V (D-S) MOSFET
Published	Sep 17, 2014
Detailed Description	Si4354DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0165 at VGS = 10 V 0.01...
Datasheet	Si4354DY PDF File

Overview

Si4354DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.
0165 at VGS = 10 V 0.
0185 at VGS = 4.
5 V ID (A) 9.
5 9.
0 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Gen II Power MOSFET • 100 % Rg Tested APPLICATIONS • High-Side DC/DC Conversion - Notebook - Server SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4354DY-T1-E3 (Lead (Pb)-free) Si4354DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Current Continuous Source Current (Diode Conduction)b Maximum Power Dissipationb Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 ± 12 9.
5 7.
5 40 2.
2 2.
5 1.
6 - 55 to 150 W °C A Unit V THERMAL RESISTANCE RATINGSa Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Foot (Drain) Notes: a.
t ≤ 10 s.
b.
Surface Mounted on 1" x 1" FR4 board.
Symbol RthJA RthJF Typical 43 19 Maximum 50 25 Unit °C/W Document Number: 72967 S09-0392-Rev.
C, 09-Mar-09 www.
vishay.
com 1 Si4354DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.
2 A, dI/dt = 100 A/µs VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 0.
45 VDS = 15 V, VGS = 4.
5 V, ID = 9.
5 A 7 1.
85 1.
20 0.
9 8 10 28 9 35 1.
35 13 15 45 15 55 ns Ω 10.
5 nC a Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Test Conditions VDS = VGS, ID = 250 µA VDS = 0...

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