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Si4800BDY

Vishay
Part Number Si4800BDY
Manufacturer Vishay
Description Fast Switching MOSFET
Published Sep 17, 2014
Detailed Description Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0185 a...
Datasheet PDF File Si4800BDY PDF File

Si4800BDY
Si4800BDY

Overview
Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.
0185 at VGS = 10 V 0.
030 at VGS = 4.
5 V ID (A) 9 7 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Efficient PWM Optimized • 100 % UIS and Rg Tested SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a, b Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range L = 0.
1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 2.
5 1.
6 - 55 to 150 2.
3 15 11.
25 1.
3 0.
8...


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