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Si4892DY

Vishay
Part Number Si4892DY
Manufacturer Vishay
Description N-Channel 30-V (D-S) MOSFET
Published Sep 17, 2014
Detailed Description Si4892DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.012 at VGS = 10 V 0.020...
Datasheet PDF File Si4892DY PDF File

Si4892DY
Si4892DY

Overview
Si4892DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.
012 at VGS = 10 V 0.
020 at VGS = 4.
5 V ID (A) 12.
4 9.
6 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • High Efficiency PWM Optimized • 100 % Rg Tested • 100 % UIS Tested D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4892DY-T1-E3 (Lead (Pb)-free) Si4892DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S 8 7 6 5 D D D D N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.
1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 3.
1 2.
0 - 55 to 150 2.
60 20 20 1.
6 1.
0 mJ W °C 12.
4 9.
9 ± 50 1.
3 10 s 30...


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