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Si4894BDY

Vishay
Part Number Si4894BDY
Manufacturer Vishay
Description N-Channel 30-V (D-S) MOSFET
Published Sep 17, 2014
Detailed Description Si4894BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.011 at VGS = 10 V 0.01...
Datasheet PDF File Si4894BDY PDF File

Si4894BDY
Si4894BDY

Overview
Si4894BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.
011 at VGS = 10 V 0.
016 at VGS = 4.
5 V ID (A) 12 9.
8 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4894BDY-T1-E3 (Lead (Pb)-free) Si4894BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D D D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a L = 0.
1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 2.
5 1.
6 - 55 to 150 2.
3 20 20 1.
4 0.
9 mJ W °C 12 9.
5 40 1.
3 10 s 30 ± 20 8.
9 7.
1 A Steady State Unit V THERMAL RESISTANC...


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