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Si7446BDP

Part Number	Si7446BDP
Manufacturer	Vishay
Description	N-Channel MOSFET
Published	Sep 17, 2014
Detailed Description	Si7446BDP Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0075 at...
Datasheet	Si7446BDP PDF File

Overview

Si7446BDP Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.
0075 at VGS = 10 V 0.
010 at VGS = 4.
5 V ID (A) 19 17 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 D 6.
15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.
15 mm G S N-Channel MOSFET Bottom View Ordering Information: Si7446BDP-T1-E3 (Lead (Pb)-free) Si7446BDP-T1-GE3 (Lead-(Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25°C TA = 70°C TA = 25°C TA = 70°C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 s Steady State 30 ± 20 19 12 15 9 50 4.
0 1.
6 4.
8 1.
9 3.
0 1.
2 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State Symbol RthJA RthJC Typical 21 55 1.
6 Maximum 26 65 2.
0 Unit °C/W Notes a.
Surface Mounted on 1" x 1" FR4 board.
b.
See Solder Profile (www.
vishay.
com/ppg?73257).
The PowerPAK SO-8 is a leadless package.
The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.
A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
c.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72554 S09-1819-Rev.
E, 14-Sep-09 www.
vishay.
com 1 Si7446BDP Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Cur...

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Si7446BDP N-Channel MOSFET - Vishay

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