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IRFU9310PBF

Part Number	IRFU9310PBF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Sep 17, 2014
Detailed Description	PD - 95064A P-Channel Surface Mount (IRFR9310) l Straight Lead (IRFU9310) l Advanced Process Technology l Fast Switchin...
Datasheet	IRFU9310PBF PDF File

Overview

PD - 95064A P-Channel Surface Mount (IRFR9310) l Straight Lead (IRFU9310) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRFR9310PbF IRFU9310PbF D HEXFET® Power MOSFET VDSS = -400V RDS(on) = 7.
0Ω S G ID = -1.
8A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications.
Power dissipation levels up to 1.
5 watts are possible in typical surface mount applications.
D-Pak TO-252AA I-Pak TO-251AA Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
-1.
8 -1.
1 -7.
2 50 0.
40 ± 20 92 -1.
8 5.
0 -24 -55 to + 150 300 (1.
6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient Typ.
Max.
2.
5 50 110 Units °C/W www.
irf.
com 1 1/10/05 IRFR/U9310PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coef...

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IRFU9310PBF Power MOSFET - International Rectifier

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