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IRF5803PbF

International Rectifier
Part Number IRF5803PbF
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 18, 2014
Detailed Description PD-95262B IRF5803PbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Availab...
Datasheet PDF File IRF5803PbF PDF File

IRF5803PbF
IRF5803PbF

Overview
PD-95262B IRF5803PbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free D D VDSS -40V RDS(on) max (mW) 112@VGS = -10V 190@VGS = -4.
5V ID -3.
4A -2.
7A Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.
This pack...


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