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AP9566GH

Advanced Power Electronics
Part Number AP9566GH
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 18, 2014
Detailed Description AP9566GH RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast ...
Datasheet PDF File AP9566GH PDF File

AP9566GH
AP9566GH


Overview
AP9566GH RoHS-compliant Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -40V 65mΩ -13.
6A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -40 +20 -13.
6 -8.
6 -50 20.
8 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 6.
0 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200806161 AP9566GH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-10A VGS=-4.
5V, ID=-6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=125oC) Min.
-40 -1 - Typ.
6 6.
5 1.
6 3.
6 6.
5 15 20 4.
5 580 70 55 Max.
Units 65 100 -3 -1 -25 +100 10.
5 930 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-32V, VGS=0V VDS=-32V, VGS=0V VGS= +20V ID=-6A VDS=-32V VGS=-4.
5V VDS=-20V ID=-6A RG=3.
3Ω,VGS=-10V RD=3.
3Ω VGS=0V VDS=-25V f=1.
0MHz Gate-Source Leakage Total Gate Char...


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