DatasheetsPDF.com

AP9565BGJ-HF

Part Number	AP9565BGJ-HF
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 18, 2014
Detailed Description	AP9565BGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ F...
Datasheet	AP9565BGJ-HF PDF File

Overview

AP9565BGH/J-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -40V 52mΩ -17A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP9565BGJ) is available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -40 +20 -17 -11 -60 25 0.
2 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 5.
0 62.
5 110 Units ℃/W ℃/W ℃/W 1 201111142 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP9565BGH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-8A VGS=-4.
5V, ID=-6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
-40 -1 - Typ.
9.
6 7.
8 1.
7 4.
8 8 17 22 23 530 110 75 Max.
Units 52 90 -3 -10 -250 +100 12.
5 850 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=...

Similar Datasheet

AP9565BGJ-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)