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SSM6K405TU

Toshiba Semiconductor
Part Number SSM6K405TU
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 18, 2014
Detailed Description MOSFETs Silicon N-Channel MOS SSM6K405TU 1. Applications • Power Management Switches • High-Speed Switching 2. Features ...
Datasheet PDF File SSM6K405TU PDF File

SSM6K405TU
SSM6K405TU

Overview
MOSFETs Silicon N-Channel MOS SSM6K405TU 1.
Applications • Power Management Switches • High-Speed Switching 2.
Features (1) 1.
5-V drive (2) Low drain-source on-resistance : RDS(ON) = 307 mΩ (max) (@VGS = 1.
5 V) RDS(ON) = 214 mΩ (max) (@VGS = 1.
8 V) RDS(ON) = 164 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.
0 V) 3.
Packaging and Internal Circuit UF6 SSM6K405TU 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2007-10 2022-12-01 Rev.
1.
0 SSM6K405TU 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 20 V VGSS ±10 Drain current (DC) (Note 1) ID 2.
0 A Drain current (pulsed) (Note 1), (Note 2) IDP 4.
0 Power dissipation Channel temperature (Note 3) PD Tch 500 mW 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads ...


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