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SSM3K324R

Toshiba Semiconductor
Part Number SSM3K324R
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 18, 2014
Detailed Description MOSFETs Silicon N-Channel MOS SSM3K324R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1...
Datasheet PDF File SSM3K324R PDF File

SSM3K324R
SSM3K324R

Overview
MOSFETs Silicon N-Channel MOS SSM3K324R 1.
Applications • Power Management Switches • DC-DC Converters 2.
Features (1) 1.
8-V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.
5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.
8 V) 3.
Packaging and Pin Assignment SOT-23F SSM3K324R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-10 2021-09-14 Rev.
3.
0 SSM3K324R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ± 12 Drain current (DC) (Note 1) ID 4.
0 A Drain current (pulsed) (Note 1), (Note 2) IDP 10 Power dissipation Power dissipation Channel temperature (Note 3) PD (t ≤ 10 s) (Note 3) PD Tch 1 W 2 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 �.
Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1% Note 3: Device mounted on an FR4 board.
(25.
4 mm × 25.
4 mm × 1.
6 mm ,Cu pad: 645 mm2) Note: Note: The MOSFETs in this device are sensitive to electrostatic discharge.
When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, R...


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