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SSM3K333R

Toshiba Semiconductor
Part Number SSM3K333R
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 18, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (U-MOS�-H) SSM3K333R 1. Applications • Power Management Switches • High-Speed Switching 2....
Datasheet PDF File SSM3K333R PDF File

SSM3K333R
SSM3K333R


Overview
MOSFETs Silicon N-Channel MOS (U-MOS�-H) SSM3K333R 1.
Applications • Power Management Switches • High-Speed Switching 2.
Features (1) 4.
5-V drive (2) Low drain-source on-resistance : RDS(ON) = 42 mΩ (max) (@VGS = 4.
5 V) RDS(ON) = 28 mΩ (max) (@VGS = 10 V) 3.
Packaging and Pin Assignment SOT-23F SSM3K333R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-10 2021-10-22 Rev.
1.
0 SSM3K333R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±20 V Drain current (DC) (Note 1) ID 6.
0 A Drain cur...



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