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SSM6N42FE

Toshiba Semiconductor
Part Number SSM6N42FE
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 18, 2014
Detailed Description SSM6N42FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N42FE ○ Power Management Switch Applications ...
Datasheet PDF File SSM6N42FE PDF File

SSM6N42FE
SSM6N42FE


Overview
SSM6N42FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N42FE ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.
5V drive • N-ch 2-in-1 • Low ON-resistance : RDS(ON) = 600 mΩ (max) (@VGS = 1.
5V) : RDS(ON) = 450 mΩ (max) (@VGS = 1.
8V) : RDS(ON) = 330 mΩ (max) (@VGS = 2.
5V) : RDS(ON) = 240 mΩ (max) (@VGS = 4.
5V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 1.
6±0.
05 1.
0±0.
05 0.
5 0.
5 ES6 : mm 1.
6±0.
05 1.
2±0.
05 1 6 2 5 3 4 0.
2±0.
05 0.
12±0.
05 0.
55±0.
05 Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID (Note 1) 800 mA Pulse IDP (Note 1) 1600 1.
Source1 2.
Gate1 3.
Drain2 4.
Source2 5.
Gate2 6.
Drain1 Drain power dissipation Channel temperature Storage temperature PD (Note 2) 150 mW Tch 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-2N1D temperature/cu...



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