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SSM6N58NU

Toshiba Semiconductor
Part Number SSM6N58NU
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 18, 2014
Detailed Description MOSFETs Silicon N-Channel MOS SSM6N58NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1...
Datasheet PDF File SSM6N58NU PDF File

SSM6N58NU
SSM6N58NU

Overview
MOSFETs Silicon N-Channel MOS SSM6N58NU 1.
Applications • Power Management Switches • DC-DC Converters 2.
Features (1) 1.
8-V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.
5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 180 mΩ (max) (@VGS = 1.
8 V) 3.
Packaging and Pin Assignment UDFN6 SSM6N58NU 1.
Source1 2.
Gate1 3.
Drain2 4.
Source2 5.
Gate2 6.
Drain1 ©2019-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-11 2021-09-17 Rev.
7.
0 SSM6N58NU 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) (Q1,Q2 Common) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ± 12 Drain current (DC) (Note 1) ID 4 A Drain current (pulsed) (Note 1), (Note 2) IDP 10 A Power dissipation Power dissipation Channel temperature Storage temperature (t ≤ 10 s) (Note 3) PD (Note 3) PD Tch Tstg 1 W 2 W 150 � -50 to 150 � Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 �.
Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1% Note 3: Device mounted on an FR-4 board.
(total dissipation) (25.
4 mm × 25.
4 mm × 1.
6 mm ,Cu pad: 645 mm2) Note: Note: Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
The MOSFETs in this device are sensitive to electrostatic discharge.
When handli...


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