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SSM5H08TU

Toshiba Semiconductor
Part Number SSM5H08TU
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Diode
Published Sep 19, 2014
Detailed Description SSM5H08TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter • • Nc...
Datasheet PDF File SSM5H08TU PDF File

SSM5H08TU
SSM5H08TU

Overview
SSM5H08TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter • • Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 20 ±12 1.
5 6.
0 0.
5 0.
8 150 Unit V V A Drain power dissipation Channel temperature W °C DIODE Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Symbol VRM VR IO IFSM Tj Rating 25 20 0.
5 2 (50 Hz) 125 Unit V V A A °C UFV JEDEC JEITA TOSHIBA ⎯ ⎯ 2-2R1A Weight: 7 mg (typ.
) Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating −55~125 −40~100 Unit °C...


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