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SSM3K44MFV

Part Number	SSM3K44MFV
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOSFET
Published	Sep 19, 2014
Detailed Description	SSM3K44MFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44MFV High Speed Switching Applications Anal...
Datasheet	SSM3K44MFV PDF File

Overview

SSM3K44MFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44MFV High Speed Switching Applications Analog Switch Applications Unit: mm 0.
32±0.
05 • AEC-Q101 qualified (Note 1) • Compact package suitable for high-density mounting • Low ON-resistance : RDS(ON) = 4.
0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.
0 Ω (max) (@VGS = 2.
5 V) 0.
22±0.
05 1.
2±0.
05 0.
8±0.
05 1.
2±0.
05 0.
8±0.
05 0.
4 0.
4 Note 1: For detail information, please contact to our sales.
Absolute Maximum Ratings (Ta = 25°C) 1 3 2 0.
13±0.
05 Characteristics Symbol Rating Unit 0.
5±0.
05 Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Drain current DC ID Pulse IDP 100 mA 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW VESM 1.
Gate 2.
Source 3.
Drain Channel temperature Storage temperature Tch 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in TOSHIBA 2-1L1B temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
Weight: 1.
5 mg (typ.
) operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.
4 mm × 25.
4 mm × 1.
6 mm) 0.
5mm 0.
45mm 0.
45mm 0.
4mm Marking 3 Equivalent Circuit 3 NT 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity.
Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static m...

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SSM3K44MFV Silicon N-Channel MOSFET - Toshiba Semiconductor

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