DatasheetsPDF.com

SSM6N35FU

Toshiba Semiconductor
Part Number SSM6N35FU
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 19, 2014
Detailed Description SSM6N35FU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FU ○ High-Speed Switching Applications ○ An...
Datasheet PDF File SSM6N35FU PDF File

SSM6N35FU
SSM6N35FU

Overview
SSM6N35FU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FU ○ High-Speed Switching Applications ○ Analog Switch Applications Unit: mm • 1.
2-V drive • N-ch 2-in-1 • Low ON-resistance: RDS(ON) = 20 Ω (max) (@VGS = 1.
2 V) RDS(ON) = 8 Ω (max) (@VGS = 1.
5 V) RDS(ON) = 4 Ω (max) (@VGS = 2.
5 V) RDS(ON) = 3 Ω (max) (@VGS = 4.
0 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 180 mA 360 1.
Source 1 4.
Source 2 2.
Gate 1 5.
Gate 2 3.
Drain 2 6.
Drain 1 Power dissipation Channel temperature Storage temperature PD (Note 1) 200 mW Tch 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-2J1C Note: Using continuously under heavy loads (e.
g.
the application of high Weight: 6.
8 mg (typ.
) temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note1: Total rating Marking 6 5 4 KZ 1 2 3 Equivalent Circuit (top view) 654 Q1 Q2 123 Start of commercial production 2008-02 1 2014-03-01 SSM6N35FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Gate leakage current Drain–source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Drain–source forward voltage Note 2: Pulse test Symbol Test Condition Min IGSS VGS = ±10 V, VD...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)