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TK13A55DA

Toshiba Semiconductor
Part Number TK13A55DA
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 19, 2014
Detailed Description TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A55DA Switching Regulator Application...
Datasheet PDF File TK13A55DA PDF File

TK13A55DA
TK13A55DA

Overview
TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A55DA Switching Regulator Applications Ф3.
2 ± 0.
2 10 ± 0.
3 Unit: mm 2.
7 ± 0.
2 A 3.
9 3.
0 1.
14 ± 0.
15 2.
8 MAX.
2.
54 1 2 3 2.
6 ± 0.
1 13 ± 0.
5 0.
69 ± 0.
15 Ф0.
2 M A Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 550 ±30 12.
5 50 45 310 12.
5 4.
5 150 −55 to 150 Unit V V A W mJ A mJ °C °C 2.
54 0.
64 ± 0.
15 15.
0 ± 0.
3 • • • • Low drain-source ON-resistance: RDS (ON) = 0.
32 Ω(typ.
) High forward transfer admittance: |Yfs| = 6.
0 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B Weight: 1.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics 2 Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.
78 62.
5 Unit °C/W °C/W 1 Note 1:Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 3.
42 mH, RG = 25 Ω, IAR = 12.
5 A Note 3: Repetitive rating: pulse widt...


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