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TK2A65D

Toshiba Semiconductor
Part Number TK2A65D
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 20, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK2A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-...
Datasheet PDF File TK2A65D PDF File

TK2A65D
TK2A65D

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK2A65D 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 2.
8 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 1.
5 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK2A65D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 2 A Drain current (pulsed) (Note 1) IDP 8 Power dissipation (Tc = 25) PD 30 W Single-pulse avalanche energy (Note 2) EAS 195 mJ Avalanche current IAR 2 A Repetitive avalanche energy (Note 3) EAR 3.
0 mJ Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 2009-09 1 2013-12-26 Rev.
2.
0 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 86 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature TK2A65D Symbol Rth(ch-c) Rth(ch-a) Max U...


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