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TK35A65W5

Toshiba Semiconductor
Part Number TK35A65W5
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 20, 2014
Detailed Description TK35A65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK35A65W5 1. Applications • Switching Voltage Regulators 2. Features ...
Datasheet PDF File TK35A65W5 PDF File

TK35A65W5
TK35A65W5

Overview
TK35A65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK35A65W5 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) (4) Fast reverse recovery time: trr = 130 ns (typ.
) Low drain-source on-resistance: RDS(ON) = 0.
08 Ω (typ.
) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.
5 V (VDS = 10 V, ID = 2.
1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-09 2014-02-25 Rev.
2.
0 TK35A65W5 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR Rating 650 ±30 35 140 50 614 8.
8 35 140 150 -55 to 150 2000 0.
6 V Nm  W mJ A A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 2.
5 62.
5 Unit /W Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 14 mH, RG = ...


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