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TK9A90E

Toshiba Semiconductor
Part Number TK9A90E
Manufacturer Toshiba Semiconductor
Description Silicon N-channel MOSFET
Published Sep 20, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK9A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-...
Datasheet PDF File TK9A90E PDF File

TK9A90E
TK9A90E

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK9A90E 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 1.
0 Ω (typ.
) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.
5 to 4.
0 V (VDS = 10 V, ID = 0.
9 mA) 3.
Packaging and Internal Circuit TK9A90E TO-220SIS 1: Gate 2: Drain 3: Source Start of commercial production 2013-10 1 2014-03-04 Rev.
3.
0 TK9A90E 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanch...


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