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TK17N65W

Toshiba Semiconductor
Part Number TK17N65W
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 20, 2014
Detailed Description TK17N65W MOSFETs Silicon N-Channel MOS (DTMOS) TK17N65W 1. Applications • Switching Voltage Regulators 2. Features (1...
Datasheet PDF File TK17N65W PDF File

TK17N65W
TK17N65W

Overview
TK17N65W MOSFETs Silicon N-Channel MOS (DTMOS) TK17N65W 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.
17 Ω (typ.
) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.
5 to 3.
5 V (VDS = 10 V, ID = 0.
9 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Mounting torque (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg TOR Rating 650 ±30 17.
3 69.
2 165 210 4.
4 17.
3 69.
2 150 -55 to 150 0.
8 Nm  W mJ A A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 1 2013-08 2014-02-25 Rev.
2.
0 TK17N65W 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 0.
757 83.
3 Unit /W Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 19.
2 mH, RG = 25 Ω, IAR = 4.
4 A Note: This transistor is sensitive to electrostatic d...


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