Part Number | TJ70A06J3 |
Manufacturer | Toshiba Semiconductor |
Description | MOSFETs |
Features | (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS ... |
Published | Sep 20, 2014 |
Datasheet | TJ70A06J3 PDF File |